- Intel (NASDAQ:INTC +1.5%) and Micron (MU +3.7%) proclaim their jointly-developed 3D XPoint (pronounced "3D crosspoint") non-volatile memory technology delivers speeds up to 1,000 times faster than NAND flash (also non-volatile), and is 10x denser than DRAM (much faster than NAND, but volatile and less dense).
- The NAND JV partners declare 3D XPoint "significantly reduces latencies, allowing much more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage." Unique materials and a cross point array structure are said to make 3D XPoint possible.
- Major write endurance improvements are also promised relative to NAND. The first product will be a 128Gb (16GB) chip.
- Intel/Micron are sharing additional at a San Francisco event (webcast). Shares of both companies are higher amid a 0.6% gain for the Nasdaq.
- Update: More details from Fortune. 3D XPoint samples are expected by year's end, and commercial shipments are set for 2016.
- Update 2: During the Q&A session for the announcement, the cost for 3D XPoint is said to be "somewhere between" that of NAND and DRAM. Intel/Micron affirm their commitment to 3D NAND, while noting its high densities.
- Update 3: Both Intel and Micron plan to make 3D XPoint products. Micron CEO Mark Durcan claims he doesn't know of any comparable rival products on the way, and predicts 3D XPoint will be used for both storage (like NAND) and main memory (like DRAM).
- Four months ago: Intel, Micron launch 3D NAND line, promise cost/capacity edge
Intel, Micron unveil "breakthrough" 3D XPoint memory tech; shares higher
This was corrected on 06/07/2022 at 8:49 PM. The post previously mentioned 3D XPoint's promised performance gains relative to NAND referred specifically to write speeds. Similar read speed improvements are also expected.
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